tm july 2007 FDG332PZ p-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation FDG332PZ rev.b www.fairchildsemi.com 1 FDG332PZ p-channel powertrench ? mosfet - 20v, - 2.6a, 97m ? features ? max r ds(on) = 95m ? at v gs = -4.5v, i d = -2.6a ? max r ds(on) = 115m ? at v gs = -2.5v, i d = -2.2a ? max r ds(on) = 160m ? at v gs = -1.8v, i d = -1.9a ? max r ds(on) = 33 0m ? at v gs = -1.5v, i d = -1.0a ? very low level gate drive requirements allowing operation in 1.5v circuits ? very small package outline sc70-6 ? rohs compliant general description this p-channel mosfet uses fairchild?s advanced low voltage powertrench ? process. it has been optimized for battery power management applications. applications ? battery management ? load switch mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -20 v v gs gate to source voltage 8 v i d drain current -continuous -2.6 a -pulsed -9 p d power dissipation (note 1a) 0.75 w power dissipation (note 1b) 0.48 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient single operation (note 1a) 170 c/w r ja thermal resistance, junction to ambient single operation (note 1b) 260 device marking device package reel size tape width quantity .32 FDG332PZ sc70-6 7?? 8 mm 3000 units d d g d d s d s d d g d pin 1 sc70-6
FDG332PZ p-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2007 fairchild semiconductor corporation FDG332PZ rev.b electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = -250 a, v gs = 0v -20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -13 mv/ c i dss zero gate voltage drain current v ds = -16v, v gs = 0v -1 a i gss gate to source leakage current v gs = 8v, v ds = 0v 10 a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a -0.4 -0.7 -1.5 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 2.5 mv/ c r ds(on) static drain to source on resistance v gs = -4.5v, i d = -2.6a 73 95 m ? v gs = -2.5v, i d = -2.2a 90 115 v gs = -1.8v, i d = -1.9a 117 160 v gs = -1.5v, i d = -1.0a 147 330 v gs = -4.5v, i d = -2.6a , t j = 125c 100 133 g fs forward transconductance v dd = -5v, i d = -2.6a 9 s dynamic characteristics c iss input capacitance v ds = -10v, v gs = 0v, f = 1mhz 420 560 pf c oss output capacitance 85 115 pf c rss reverse transfer capacitance 75 115 pf switching characteristics t d(on) turn-on delay time v dd = -10v, i d = -2.6a, v gs = -4.5v, r gen = 6 ? 5.2 10 ns t r rise time 4.8 10 ns t d(off) turn-off delay time 59 95 ns t f fall time 28 45 ns q g total gate charge v gs = -4.5v, v dd = -10v, i d = -2.6a 7.6 10.8 nc q gs gate to source charge 0.9 nc q gd gate to drain ?miller? charge 1.9 nc drain-source diod e characteristics i s maximum continuous drain-source diode forward current -0.6 a v sd source to drain diode forward voltage v gs = 0v, i s = -0.6a (note 2) -0.7 -1.2 v t rr reverse recovery time i f = 2.6a, di/dt = 100a/ s 28 45 ns q rr reverse recovery charge 8 13 nc and maximum ratings notes: 1. r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 s, duty cycle < 2.0%. a. 170c/w when mounted on a 1 in 2 pad of 2 oz copper . b. 260c/w when mounted on a minimum pad of 2 oz copper.
FDG332PZ p-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2007 fairchild semiconductor corporation FDG332PZ rev.b typical characteristics t j = 25c unless otherwise noted figure 1. 0.0 0.4 0.8 1.2 1.6 2.0 0 3 6 9 v gs = -2.5v v gs = -4.5v v gs = -1.5v v gs = -1.8v v gs = -3v pulse duration = 80 s duty cycle = 0.5%max -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 0369 0.5 1.0 1.5 2.0 2.5 v gs = -2.5v v gs = -1.8v pulse duration = 80 s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current (a) v gs = -3v v gs = -1.5v v gs = -4.5v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -2.6a v gs = -4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 12345 50 100 150 200 250 300 pulse duration = 80 s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = -2.6a r ds(on) , drain to source on-resistance ( m ? ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.0 0.5 1.0 1.5 2.0 2.5 0 3 6 9 v dd = -5v pulse duration = 80 s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 4 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDG332PZ p-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2007 fairchild semiconductor corporation FDG332PZ rev.b figure 7. 02468 0.0 1.5 3.0 4.5 i d = -2.6a v dd = -15v v dd = -5v -v gs , gate to source voltage(v) q g , gate charge (nc) v dd = -10v gate charge characteristics figure 8. 0.1 1 10 100 1000 30 20 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.1 1 10 0.01 0.1 1 10 10s 1s 100ms dc 10ms 1ms 100us this area is limited by r ds(on) 50 single pulse t j = max rated r ja = 260 o c/w t a = 25 o c -i d , drain current (a) -v ds , drain to source voltage (v) f o r w a r d b i a s s a f e operating area figure 10. 0 5 10 15 20 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 v gs = 0v t j = 25 o c t j = 150 o c -v gs , gate to source voltage (v) -i g , gate leakage current(ua) g a t e l e a k a g e c u r r e n t v s g a te t o source voltage figure 11. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.1 1 10 100 p (pk) , peak transient power (w) v gs = -4.5v single pulse r ja = 260 o c/w t a = 25 o c t, pulse width (s) typical characteristics t j = 25c unless otherwise noted
FDG332PZ p-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2007 fairchild semiconductor corporation FDG332PZ rev.b figure 12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse r ja = 260 o c/w 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z qja x r qja + t a transient thermal response curve typical characteristics t j = 25c unless otherwise noted
FDG332PZ p-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation www.fairchildsemi.com trademarks the following are registered and unregistered trademarks and se rvice marks fairchild semic onductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, functio n, or design. fairchild does not ass ume any liability arising out of the application or use of any product or circuit describe d herein; neither does it convey any license under its patent rights, nor the rights of others. these s pecifications do not expand the terms of fairchild?s worldwide terms and cond itions, specifically the warranty th erein, which covers these products. life support policy fairchild?s products are not author ized for use as critical components in life support devices or systems without the express written approval of fairchild semico nductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, c an be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resourse sm green fps? green fps? e-series? got? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfeet? micropak? motion-spm? optologic ? optoplanar ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this data sheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet c ontains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. obsolete not in production this datasheet cont ains specifications on a product that has been discontinued by fairchild semiconductor.the datasheet is printed for reference information only. rev. i29 tm tm
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